Power
4N65F GOODWORK Inventory and RFQ Quote
650V 4A 34W 2.1Ω@10V,2A 4V@250uA 1PCSNChannel ITO-220AB MOSFETs ROHS 4N65F GOODWORK TO-220F Power advantage inventory, RFQ quote, BOM sourcing and alternative part support from GalaxyIC.
- Part
- 4N65F
- Brand
- GOODWORK
- Qty
- 547000
- Package
- TO-220F
- Date Code
- 25+
- Alternative
- Category
- Power
Technical Overview
650V 4A 34W 2.1Ω@10V,2A 4V@250uA 1PCSNChannel ITO-220AB MOSFETs ROHS
- Source Category
- /MOS / > (MOSFET)
- Reference Source
- LCSC
Key Specifications
- Drain Source Voltage (Vdss): 650V
- Continuous Drain Current (Id): 4A
- Power Dissipation (Pd): 34W
- Drain Source On Resistance (RDS(on)@Vgs: 2.1Ω@10V
- Gate Threshold Voltage (Vgs(th)@Id): 4V@250uA
- Reverse Transfer Capacitance (Crss@Vds): 5.8pF@25V
- Type: 1 N
- Input Capacitance (Ciss@Vds): 425pF@25V
- Total Gate Charge (Qg@Vgs): 14.5nC@10V
- Operating Temperature: -