Semiconductors
4N65 GOODWORK Inventory and RFQ Quote
650V 4A 2.1Ω@10V,2A 38W 4V@250uA 1PCSNChannel TO-252-2 MOSFETs ROHS 4N65 GOODWORK Semiconductors advantage inventory, RFQ quote, BOM sourcing and alternative part support from GalaxyIC.
- Part
- 4N65
- Brand
- GOODWORK
- Qty
- 507000
- Package
- Date Code
- 25+
- Alternative
- Category
- Semiconductors
Technical Overview
650V 4A 2.1Ω@10V,2A 38W 4V@250uA 1PCSNChannel TO-252-2 MOSFETs ROHS
- Source Category
- /MOS / > (MOSFET)
- Reference Source
- LCSC
Key Specifications
- Drain Source Voltage (Vdss): 650V
- Continuous Drain Current (Id): 4A
- Drain Source On Resistance (RDS(on)@Vgs: 2.1Ω@10V
- Power Dissipation (Pd): 38W
- Gate Threshold Voltage (Vgs(th)@Id): 4V@250uA
- Reverse Transfer Capacitance (Crss@Vds): 5.8pF@25V
- Type: 1 N
- Input Capacitance (Ciss@Vds): 425pF@25V
- Total Gate Charge (Qg@Vgs): 14.5nC@10V
- Operating Temperature: -