Semiconductors
3DD13001 onsemi Inventory and RFQ Quote
500V 500mW 30@1mA,5V 200mA NPN SOT-23 Bipolar (BJT) ROHS 3DD13001 onsemi TO-92 Semiconductors advantage inventory, RFQ quote, BOM sourcing and alternative part support from GalaxyIC.
- Part
- 3DD13001
- Brand
- onsemi
- Qty
- 591000
- Package
- TO-92
- Date Code
- 25+
- Alternative
- Category
- Semiconductors
Technical Overview
500V 500mW 30@1mA,5V 200mA NPN SOT-23 Bipolar (BJT) ROHS
- Source Category
- /MOS / > (BJT)
- Reference Source
- LCSC
Key Specifications
- Collector Cut-Off Current (Icbo): 1uA
- Collector-Emitter Breakdown Voltage (Vceo): 500V
- Power Dissipation (Pd): 500mW
- DC Current Gain (hFE@Ic: 30@1mA
- Collector Current (Ic): 200mA
- Transistor Type: NPN
- Collector-Emitter Saturation Voltage (VCE(sat)@Ic: 500mV@100mA
- Operating Temperature: -55℃~+150℃