Semiconductors
2SD1802-T onsemi Inventory and RFQ Quote
50V 1W 400@100mA,2V 3A NPN TO-252 Bipolar (BJT) ROHS 2SD1802-T onsemi TO-252 Semiconductors advantage inventory, RFQ quote, BOM sourcing and alternative part support from GalaxyIC.
- Part
- 2SD1802-T
- Brand
- onsemi
- Qty
- 546000
- Package
- TO-252
- Date Code
- 25+
- Alternative
- Category
- Semiconductors
Technical Overview
50V 1W 400@100mA,2V 3A NPN TO-252 Bipolar (BJT) ROHS
- Source Category
- /MOS / > (BJT)
- Reference Source
- LCSC
Key Specifications
- Collector Cut-Off Current (Icbo): 600nA
- Collector-Emitter Breakdown Voltage (Vceo): 50V
- Power Dissipation (Pd): 1W
- DC Current Gain (hFE@Ic: 400@100mA
- Collector Current (Ic): 3A
- Transition Frequency (fT): 150MHz
- Collector-Emitter Saturation Voltage (VCE(sat)@Ic: 500mV@2A
- Transistor Type: NPN
- Operating Temperature: -55℃~+150℃