Semiconductors
2SB806 CBI Inventory and RFQ Quote
120V 2W 45@5mA,1V 700mA PNP SOT-89-3 Bipolar (BJT) ROHS 2SB806 CBI Semiconductors advantage inventory, RFQ quote, BOM sourcing and alternative part support from GalaxyIC.
- Part
- 2SB806
- Brand
- CBI
- Qty
- 542000
- Package
- Date Code
- 25+
- Alternative
- Category
- Semiconductors
Technical Overview
120V 2W 45@5mA,1V 700mA PNP SOT-89-3 Bipolar (BJT) ROHS
- Source Category
- /MOS / > (BJT)
- Reference Source
- LCSC
Key Specifications
- Collector Cut-Off Current (Icbo): 100nA
- Collector-Emitter Breakdown Voltage (Vceo): 120V
- Power Dissipation (Pd): 2W
- DC Current Gain (hFE@Ic: 45@5mA
- Collector Current (Ic): 700mA
- Transition Frequency (fT): 75MHz
- Collector-Emitter Saturation Voltage (VCE(sat)@Ic: 400mV@500mA
- Transistor Type: PNP
- Operating Temperature: -