Semiconductors
2SB647A-C onsemi Inventory and RFQ Quote
100V 900mW 100@150mA,5V 1A PNP TO-92LM Bipolar (BJT) ROHS 2SB647A-C onsemi TO-92M Semiconductors advantage inventory, RFQ quote, BOM sourcing and alternative part support from GalaxyIC.
- Part
- 2SB647A-C
- Brand
- onsemi
- Qty
- 528000
- Package
- TO-92M
- Date Code
- 25+
- Alternative
- Category
- Semiconductors
Technical Overview
100V 900mW 100@150mA,5V 1A PNP TO-92LM Bipolar (BJT) ROHS
- Source Category
- /MOS / > (BJT)
- Reference Source
- LCSC
Key Specifications
- Collector Cut-Off Current (Icbo): 10uA
- Collector-Emitter Breakdown Voltage (Vceo): 100V
- Power Dissipation (Pd): 900mW
- DC Current Gain (hFE@Ic: 100@150mA
- Collector Current (Ic): 1A
- Transition Frequency (fT): 140MHz
- Collector-Emitter Saturation Voltage (VCE(sat)@Ic: 1V@500mA
- Transistor Type: PNP
- Operating Temperature: -