Semiconductors
2SB1260G-Q-AB3-R UTC(Unisonic Tech) Inventory and RFQ Quote
80V 500mW 120@100mA,3V 1A PNP SOT-89 Bipolar (BJT) ROHS 2SB1260G-Q-AB3-R UTC(Unisonic Tech) SOT-89 Semiconductors advantage inventory, RFQ quote, BOM sourcing and alternative part support from GalaxyIC.
- Part
- 2SB1260G-Q-AB3-R
- Brand
- UTC(Unisonic Tech)
- Qty
- 533000
- Package
- SOT-89
- Date Code
- 25+
- Alternative
- Category
- Semiconductors
Technical Overview
80V 500mW 120@100mA,3V 1A PNP SOT-89 Bipolar (BJT) ROHS
- Source Category
- /MOS / > (BJT)
- Reference Source
- LCSC
Key Specifications
- Collector Cut-Off Current (Icbo): 1uA
- Collector-Emitter Breakdown Voltage (Vceo): 80V
- Power Dissipation (Pd): 500mW
- DC Current Gain (hFE@Ic: 120@100mA
- Collector Current (Ic): 1A
- Transition Frequency (fT): 100MHz
- Collector-Emitter Saturation Voltage (VCE(sat)@Ic: 400mV@500mA
- Transistor Type: PNP
- Operating Temperature: -