Semiconductors
2SB1132-Q Foshan Blue Rocket Elec Inventory and RFQ Quote
32V 500mW 120@100mA,3V 1A PNP SOT-89-3 Bipolar (BJT) ROHS 2SB1132-Q Foshan Blue Rocket Elec Semiconductors advantage inventory, RFQ quote, BOM sourcing and alternative part support from GalaxyIC.
- Part
- 2SB1132-Q
- Brand
- Foshan Blue Rocket Elec
- Qty
- 519000
- Package
- Date Code
- 25+
- Alternative
- Category
- Semiconductors
Technical Overview
32V 500mW 120@100mA,3V 1A PNP SOT-89-3 Bipolar (BJT) ROHS
- Source Category
- /MOS / > (BJT)
- Reference Source
- LCSC
Key Specifications
- Collector Cut-Off Current (Icbo): 500nA
- Collector-Emitter Breakdown Voltage (Vceo): 32V
- Power Dissipation (Pd): 500mW
- DC Current Gain (hFE@Ic: 120@100mA
- Collector Current (Ic): 1A
- Transition Frequency (fT): 150MHz
- Collector-Emitter Saturation Voltage (VCE(sat)@Ic: 500mV@500mA
- Transistor Type: PNP
- Operating Temperature: -