Transistor
2SA812 FOSAN Inventory and RFQ Quote
50V 200mW 300@1mA,6V 100mA PNP SOT-23 Bipolar (BJT) ROHS 2SA812 FOSAN SOT-23 Transistor advantage inventory, RFQ quote, BOM sourcing and alternative part support from GalaxyIC.
- Part
- 2SA812
- Brand
- FOSAN
- Qty
- 540000
- Package
- SOT-23
- Date Code
- 25+
- Alternative
- Category
- Transistor
Technical Overview
50V 200mW 300@1mA,6V 100mA PNP SOT-23 Bipolar (BJT) ROHS
- Source Category
- /MOS / > (BJT)
- Reference Source
- LCSC
Key Specifications
- Collector Cut-Off Current (Icbo): 100nA
- Collector-Emitter Breakdown Voltage (Vceo): 50V
- Power Dissipation (Pd): 200mW
- DC Current Gain (hFE@Ic: 300@1mA
- Collector Current (Ic): 100mA
- Transition Frequency (fT): 180MHz
- Collector-Emitter Saturation Voltage (VCE(sat)@Ic: 300mV@100mA
- Transistor Type: PNP
- Operating Temperature: -