Semiconductors
2SA2061(TE85L,F) Toshiba Semiconductor and Storage Inventory and RFQ Quote
20V 625mW 200@500mA,2V 2.5A PNP TO-236-3(SOT-23-3) Bipolar (BJT) ROHS 2SA2061(TE85L,F) Toshiba Semiconductor and Storage Semiconductors advantage inventory, RFQ quote, BOM sourcing and alternative part support from GalaxyIC.
- Part
- 2SA2061(TE85L,F)
- Brand
- Toshiba Semiconductor and Storage
- Qty
- 512000
- Package
- Date Code
- 25+
- Alternative
- Category
- Semiconductors
Technical Overview
20V 625mW 200@500mA,2V 2.5A PNP TO-236-3(SOT-23-3) Bipolar (BJT) ROHS
- Source Category
- /MOS / > (BJT)
- Reference Source
- LCSC
Key Specifications
- Collector Cut-Off Current (Icbo): 100nA
- Collector-Emitter Breakdown Voltage (Vceo): 20V
- Power Dissipation (Pd): 625mW
- DC Current Gain (hFE@Ic: 200@500mA
- Collector Current (Ic): 2.5A
- Transistor Type: PNP
- Collector-Emitter Saturation Voltage (VCE(sat)@Ic: 190mV@53mA