Semiconductors
2SA1587-GR,LF Toshiba Semiconductor and Storage Inventory and RFQ Quote
Bipolar Transistors - BJT Transistor for Low Freq. Amplification 2SA1587-GR,LF Toshiba Semiconductor and Storage SOT-323 Semiconductors advantage inventory, RFQ quote, BOM sourcing and alternative part support from GalaxyIC.
- Part
- 2SA1587-GR,LF
- Brand
- Toshiba Semiconductor and Storage
- Qty
- 586000
- Package
- SOT-323
- Date Code
- 25+
- Alternative
- Category
- Semiconductors
Technical Overview
Bipolar Transistors - BJT Transistor for Low Freq. Amplification
- Source Category
- Semiconductors > Discrete Semiconductors > Transistors > Bipolar Transistors - BJT
- Reference Source
- Mouser
Key Specifications
- Transistor Polarity: PNP
- Emitter- Base Voltage VEBO: - 5 V
- Package / Case: SC-70-3
- Packaging: ['Cut Tape', 'MouseReel', 'Reel']
- Product Category: Bipolar Transistors - BJT
- Brand: Toshiba
- DC Current Gain hFE Max: 700
- Unit Weight: 0.000212 oz
- Collector- Emitter Voltage VCEO Max: - 120 V
- Product Type: BJTs - Bipolar Transistors