Semiconductors
2SA1362-GR,LF Toshiba Semiconductor and Storage Inventory and RFQ Quote
Bipolar Transistors - BJT PNP Transistor, VCEO=-15V, IC=-0.8A, hFE=200 to 400 in SOT-346 (S-Mini) package 2SA1362-GR,LF Toshiba Semiconductor and Storage Semiconductors advantage inventory, RFQ quote, BOM sourcing and alternative part support from GalaxyIC.
- Part
- 2SA1362-GR,LF
- Brand
- Toshiba Semiconductor and Storage
- Qty
- 507000
- Package
- Date Code
- 25+
- Alternative
- Category
- Semiconductors
Technical Overview
Bipolar Transistors - BJT PNP Transistor, VCEO=-15V, IC=-0.8A, hFE=200 to 400 in SOT-346 (S-Mini) package
- Source Category
- Semiconductors > Discrete Semiconductors > Transistors > Bipolar Transistors - BJT
- Lifecycle
- New Product: New from this manufacturer.
- Reference Source
- Mouser
Key Specifications
- Transistor Polarity: PNP
- Emitter- Base Voltage VEBO: - 5 V
- Package / Case: SC-59-3
- Packaging: ['Cut Tape', 'MouseReel', 'Reel']
- Product Category: Bipolar Transistors - BJT
- Brand: Toshiba
- DC Current Gain hFE Max: 400
- Collector- Emitter Voltage VCEO Max: - 15 V
- Configuration: Single
- Maximum Operating Temperature: + 150 C