Semiconductors
2PB710ASL-QR Nexperia USA Inc. Inventory and RFQ Quote
50V 250mW 170@150mA,10V 500mA PNP TO-236AB Bipolar (BJT) ROHS 2PB710ASL-QR Nexperia USA Inc. Semiconductors advantage inventory, RFQ quote, BOM sourcing and alternative part support from GalaxyIC.
- Part
- 2PB710ASL-QR
- Brand
- Nexperia USA Inc.
- Qty
- 535000
- Package
- Date Code
- 25+
- Alternative
- Category
- Semiconductors
Technical Overview
50V 250mW 170@150mA,10V 500mA PNP TO-236AB Bipolar (BJT) ROHS
- Source Category
- /MOS / > (BJT)
- Reference Source
- LCSC
Key Specifications
- Collector Cut-Off Current (Icbo): 10nA
- Collector-Emitter Breakdown Voltage (Vceo): 50V
- Power Dissipation (Pd): 250mW
- DC Current Gain (hFE@Ic: 170@150mA
- Collector Current (Ic): 500mA
- Transition Frequency (fT): 140MHz
- Transistor Type: PNP
- Collector-Emitter Saturation Voltage (VCE(sat)@Ic: 600mV@30mA