Transistor
2N6767 Harris Corporation Inventory and RFQ Quote
350V 12A 400mΩ@7.75A,10V 150W 4V@1mA 1PCSNChannel TO-3 MOSFETs ROHS 2N6767 Harris Corporation TO-3 Transistor advantage inventory, RFQ quote, BOM sourcing and alternative part support from GalaxyIC.
- Part
- 2N6767
- Brand
- Harris Corporation
- Qty
- 578000
- Package
- TO-3
- Date Code
- 25+
- Alternative
- Category
- Transistor
Technical Overview
350V 12A 400mΩ@7.75A,10V 150W 4V@1mA 1PCSNChannel TO-3 MOSFETs ROHS
- Source Category
- /MOS / > (MOSFET)
- Reference Source
- LCSC
Key Specifications
- Drain Source Voltage (Vdss): 350V
- Continuous Drain Current (Id): 12A
- Drain Source On Resistance (RDS(on)@Vgs: 400mΩ@7.75A
- Power Dissipation (Pd): 150W
- Gate Threshold Voltage (Vgs(th)@Id): 4V@1mA
- Type: 1 N
- Input Capacitance (Ciss@Vds): 3nF@25V
- Operating Temperature: -55℃~+150℃@(Tj)