Transistor
2N6763 International Rectifier Inventory and RFQ Quote
POWER FIELD-EFFECT TRANSISTOR, N 2N6763 International Rectifier TO-3 Transistor advantage inventory, RFQ quote, BOM sourcing and alternative part support from GalaxyIC.
- Part
- 2N6763
- Brand
- International Rectifier
- Qty
- 540000
- Package
- TO-3
- Date Code
- 25+
- Alternative
- Category
- Transistor
Technical Overview
POWER FIELD-EFFECT TRANSISTOR, N
- Source Category
- ["Discrete Semiconductor Products", "Transistors - FETs, MOSFETs - Single"]
- Reference Source
- DigiKey
Key Specifications
- Mfr: International Rectifier
- Series: HEXFET®
- Package: Bulk
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60 V
- Current - Continuous Drain (Id) @ 25°C: 31A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 80mOhm @ 20A, 10V