Transistor
2N6579 Microchip Technology Inventory and RFQ Quote
350V 125W 12A NPN TO-204AD(TO-3) Bipolar (BJT) ROHS 2N6579 Microchip Technology TO-3 Transistor advantage inventory, RFQ quote, BOM sourcing and alternative part support from GalaxyIC.
- Part
- 2N6579
- Brand
- Microchip Technology
- Qty
- 576000
- Package
- TO-3
- Date Code
- 25+
- Alternative
- Category
- Transistor
Technical Overview
350V 125W 12A NPN TO-204AD(TO-3) Bipolar (BJT) ROHS
- Source Category
- /MOS / > (BJT)
- Reference Source
- LCSC
Key Specifications
- Collector-Emitter Breakdown Voltage (Vceo): 350V
- Power Dissipation (Pd): 125W
- Collector Current (Ic): 12A
- Collector-Emitter Saturation Voltage (VCE(sat)@Ic: 1.5V@500µA
- Transistor Type: NPN
- Operating Temperature: -65℃~+200℃@(Tj)