Transistor
2N6512 Microchip Technology Inventory and RFQ Quote
300V 120W 10@4A,3V 7A NPN TO-204AD(TO-3) Bipolar (BJT) ROHS 2N6512 Microchip Technology TO-3 Transistor advantage inventory, RFQ quote, BOM sourcing and alternative part support from GalaxyIC.
- Part
- 2N6512
- Brand
- Microchip Technology
- Qty
- 600000
- Package
- TO-3
- Date Code
- 25+
- Alternative
- Category
- Transistor
Technical Overview
300V 120W 10@4A,3V 7A NPN TO-204AD(TO-3) Bipolar (BJT) ROHS
- Source Category
- /MOS / > (BJT)
- Reference Source
- LCSC
Key Specifications
- Collector-Emitter Breakdown Voltage (Vceo): 300V
- Power Dissipation (Pd): 120W
- DC Current Gain (hFE@Ic: 10@4A
- Collector Current (Ic): 7A
- Transition Frequency (fT): 3MHz
- Transistor Type: NPN
- Collector-Emitter Saturation Voltage (VCE(sat)@Ic: 1.5V@800mA