Transistor
2N5551U CBI Inventory and RFQ Quote
160V 500mW 80@10mA,5V 600mA SOT-89-3 Bipolar (BJT) ROHS 2N5551U CBI Transistor advantage inventory, RFQ quote, BOM sourcing and alternative part support from GalaxyIC.
- Part
- 2N5551U
- Brand
- CBI
- Qty
- 513000
- Package
- Date Code
- 25+
- Alternative
- Category
- Transistor
Technical Overview
160V 500mW 80@10mA,5V 600mA SOT-89-3 Bipolar (BJT) ROHS
- Source Category
- /MOS / > (BJT)
- Reference Source
- LCSC
Key Specifications
- Collector Cut-Off Current (Icbo): 50nA
- Collector-Emitter Breakdown Voltage (Vceo): 160V
- Power Dissipation (Pd): 500mW
- DC Current Gain (hFE@Ic: 80@10mA
- Collector Current (Ic): 600mA
- Transition Frequency (fT): 100MHz
- Collector-Emitter Saturation Voltage (VCE(sat)@Ic: 200mV@50mA
- Transistor Type: -
- Operating Temperature: -