Transistor
2N5551-B onsemi Inventory and RFQ Quote
160V 625mW 100@10mA,5V 600mA NPN TO-92-3 Bipolar (BJT) ROHS 2N5551-B onsemi TO-92 Transistor advantage inventory, RFQ quote, BOM sourcing and alternative part support from GalaxyIC.
- Part
- 2N5551-B
- Brand
- onsemi
- Qty
- 586000
- Package
- TO-92
- Date Code
- 25+
- Alternative
- Category
- Transistor
Technical Overview
160V 625mW 100@10mA,5V 600mA NPN TO-92-3 Bipolar (BJT) ROHS
- Source Category
- /MOS / > (BJT)
- Reference Source
- LCSC
Key Specifications
- Collector Cut-Off Current (Icbo): 100nA
- Collector-Emitter Breakdown Voltage (Vceo): 160V
- Power Dissipation (Pd): 625mW
- DC Current Gain (hFE@Ic: 100@10mA
- Collector Current (Ic): 600mA
- Transition Frequency (fT): 110MHz
- Collector-Emitter Saturation Voltage (VCE(sat)@Ic: 150mV@10mA
- Transistor Type: NPN
- Operating Temperature: -