Transistor
2N3879 Microchip Technology Inventory and RFQ Quote
75V 35W 40@500mA,5V 7A NPN TO-66(TO-213AA) Bipolar (BJT) ROHS 2N3879 Microchip Technology TO-66 Transistor advantage inventory, RFQ quote, BOM sourcing and alternative part support from GalaxyIC.
- Part
- 2N3879
- Brand
- Microchip Technology
- Qty
- 515000
- Package
- TO-66
- Date Code
- 25+
- Alternative
- Category
- Transistor
Technical Overview
75V 35W 40@500mA,5V 7A NPN TO-66(TO-213AA) Bipolar (BJT) ROHS
- Source Category
- /MOS / > (BJT)
- Reference Source
- LCSC
Key Specifications
- Collector Cut-Off Current (Icbo): 4mA
- Collector-Emitter Breakdown Voltage (Vceo): 75V
- Power Dissipation (Pd): 35W
- DC Current Gain (hFE@Ic: 40@500mA
- Collector Current (Ic): 7A
- Transistor Type: NPN
- Collector-Emitter Saturation Voltage (VCE(sat)@Ic: 1.2V@400mA
- Operating Temperature: -65℃~+200℃@(Tj)