Semiconductors
2DB1188R-13 Diodes Incorporated Inventory and RFQ Quote
Bipolar Transistors - BJT 1000W -32Vceo 2DB1188R-13 Diodes Incorporated Semiconductors advantage inventory, RFQ quote, BOM sourcing and alternative part support from GalaxyIC.
- Part
- 2DB1188R-13
- Brand
- Diodes Incorporated
- Qty
- 590000
- Package
- Date Code
- 25+
- Alternative
- Category
- Semiconductors
Technical Overview
Bipolar Transistors - BJT 1000W -32Vceo
- Source Category
- Semiconductors > Discrete Semiconductors > Transistors > Bipolar Transistors - BJT
- Reference Source
- Mouser
Key Specifications
- Transistor Polarity: PNP
- Emitter- Base Voltage VEBO: 6 V
- Width: 2.48 mm
- Package / Case: SOT-89-3
- Mounting Style: SMD/SMT
- Product Category: Bipolar Transistors - BJT
- Brand: Diodes Incorporated
- DC Current Gain hFE Max: 390
- Unit Weight: 0.001834 oz
- Collector- Emitter Voltage VCEO Max: 32 V