| Transistor Type | N-Channel MOSFET |
| Drain-Source Voltage (V<sub>DS</sub>) | 40V |
| Gate-Source Voltage (V<sub>GS</sub>) | ±20V |
| Continuous Drain Current (I<sub>D</sub>) | 50A (at 25°C) |
| Pulsed Drain Current (I<sub>DM</sub>) | 180A |
| On-Resistance (R<sub>DS(on)</sub>) | 8.5 mΩ (typical at V<sub>GS</sub> = 10V) |
| Gate Charge (Q<sub>g</sub>) | 31.8 nC (typical) |
| Threshold Voltage (V<sub>GS(th)</sub>) | 1.0V to 2.5V |
| Power Dissipation (P<sub>D</sub>) | 45W |
| Operating Temperature Range | -55°C to +150°C |
| Package Type | TO-252 (DPAK) |
The P2504BDG is an N-channel enhancement mode power MOSFET manufactured by NIKO-SEM. This MOSFET is designed for high-efficiency power management applications, offering low on-resistance and high current handling capacity. It’s widely used in applications such as power supplies, DC-DC converters, and motor control circuits.