MMBT5551LT1G Onsemi & Datasheet Small-Signal NPN BJT

MMBT5551LT1G

Bipolar (BJT) Transistor NPN 160 V 600 mA 225 mW Surface Mount SOT-23-3 (TO-236)
sku:MMBT5551LT1G
Manufacture:Onsemi
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Description

Manufacturer onsemi
Manufacturer Standard Lead Time 11 Weeks
Package Tape & Reel (TR), Cut Tape (CT)
Description TRANS NPN 160V 0.6A SOT23-3
Product Status Active
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Supplier Device Package SOT-23-3 (TO-236)
Base Product Number MMBT5551

The MMBT5551LT1G is a small-signal NPN bipolar junction transistor (BJT) manufactured by ON Semiconductor. As a general-purpose transistor, it finds applications in amplification and signal processing circuits. Here’s an expanded description:

The MMBT5551LT1G is an NPN silicon BJT designed for use in various electronic circuits, particularly in applications where small-signal amplification is required. This transistor belongs to the MMBT series, which signifies its compact SMT (Surface Mount Technology) package type.

As a bipolar junction transistor, the MMBT5551LT1G consists of three layers of semiconductor material: the emitter, base, and collector. By applying a small current at the base terminal, the transistor can control a larger current flow between the collector and emitter. This characteristic makes it suitable for amplifying weak signals in electronic circuits.