K4UBE3D4AB-MGCL Samsung Electro-Mechanics Memory DDR SDRAM

K4UBE3D4AB-MGCL

FBGA-200 DDR SDRAM ROHS
sku:K4UBE3D4AB-MGCL
Manufacture:Samsung Electro-Mechanics
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Description

Manufacturer Samsung Electro-Mechanics
Series
D/C Within 2 years
Density 32GB
Organization x32
Speed 4266 Mbps
Voltage 1.8 / 1.1 / 0.6 V
Temperature -25 ~ 85 °C
Package 200 FBGA
Product Status Mass Production
ECCN EAR99

The K4UBE3D4AB-MGCL is a DRAM chip from Samsung Electronics. Specifically, it is a Mobile LPDDR4X SDRAM with a 256Gbit capacity, organized as 8Gx32, and operates at 1.1V/1.8V. It comes in a 200-pin FBGA package. This type of memory is designed for use in mobile devices, providing high-density and low-power consumption for applications requiring efficient performance and extended battery life.