| Manufacturer | Samsung Electro-Mechanics |
| Series | – |
| D/C | Within 2 years |
| Version | eMMC 5.1 |
| Density | 8 Gb |
| Organization | x32 |
| Speed | 3733 Mbps |
| Voltage | 1.8 / 1.1 / 1.1 V |
| Temperature | -40 ~ 105 °C |
| Package | 200 FBGA |
The Samsung K4F8E3S4HB-MHCJ is a DRAM chip designed for high-performance memory applications. It features a capacity of 8Gb, configured as 256Mx32, and operates with a low power DDR4 (LPDDR4) interface. This chip is suitable for a variety of applications, including mobile devices and other electronics requiring efficient and reliable memory solutions.