| Manufacturer | Samsung Electro-Mechanics |
| Series | – |
| D/C | 22+ |
| Organization | 64M x 16 |
| Density | 1 Gb |
| Speed | 1866 Mbps |
| Package | 96 FBGA |
| Voltage | 1.35 V |
| Temperature | -40 ~ 95 °C |
| Product Status | EOL |
The “K4B1G1646I-BFMA” is a 1Gb (Gigabit) DDR3 SDRAM memory chip from Samsung, designed for high-speed data processing applications. It features an 8-bit prefetch architecture, operates at a supply voltage of 1.5V, and has a data rate of 1600 Mbps. This chip is typically used in applications requiring high memory bandwidth, such as computers, servers, and other digital electronic devices. Its advanced design ensures efficient performance, reliability, and energy efficiency in a compact form factor, making it suitable for a wide range of high-performance computing applications.