Manufacturer | Infineon |
Brand | Infineon Technologies |
Product Type | MOSFET |
Factory Pack Quantity | 800 |
Technology | Si |
Mounting Style | SMD/SMT |
Package / Case | TO-252-3 |
Transistor Polarity | N-Channel |
Number of Channels | 1 Channel |
Vds – Drain-Source Breakdown Voltage | 100 V |
Id – Continuous Drain Current | 97 A |
Rds On – Drain-Source Resistance | 9 mOhms |
Vgs – Gate-Source Voltage | – 20 V, + 20 V |
Vgs th – Gate-Source Threshold Voltage | 4 V |
Qg – Gate Charge | 120 nC |
Minimum Operating Temperature | – 55 C |
Maximum Operating Temperature | + 175 C |
Pd – Power Dissipation | 230 W |
Channel Mode | Enhancement |
Configuration | Single |
Fall Time | 57 ns |
Height | 2.3 mm |
Length | 6.5 mm |
Rise Time | 52 ns |
Transistor Type | 1 N-Channel |
Width | 6.22 mm |
Unit Weight | 0.011640 oz |