IRFP4468PBF Infineon Technologies MOSFET

Manufacturer	Infineon
Technology	Si
Mounting Style	Through Hole
Package / Case	TO-247-3
Transistor Polarity	N-Channel
Number of Channels	1 Channel
Vds – Drain-Source Breakdown Voltage	100 V
Id – Continuous Drain Current	290 A
Rds On – Drain-Source Resistance	2 mOhms
Vgs – Gate-Source Voltage	– 20 V, + 20 V
Vgs th – Gate-Source Threshold Voltage	1.8 V
Qg – Gate Charge	360 nC
Minimum Operating Temperature	– 55 C
Maximum Operating Temperature	+ 175 C
Pd – Power Dissipation	520 W
Channel Mode	Enhancement
Packaging	Tube
Brand	Infineon Technologies
Configuration	Single
Height	20.7 mm
Length	15.87 mm
Product Type	MOSFET
Factory Pack Quantity	400
Transistor Type	1 N-Channel
Width	5.31 mm
Unit Weight	0.211644 oz

IRFP4468PBF