IRFB7534PBF

Manufacturer	Infineon
Packaging	Tube
Brand	Infineon Technologies
Product Type	MOSFET
Factory Pack Quantity	1000
Tradename	StrongIRFET
Technology	Si
Mounting Style	Through Hole
Package / Case	TO-220-3
Transistor Polarity	N-Channel
Number of Channels	1 Channel
Vds – Drain-Source Breakdown Voltage	60 V
Id – Continuous Drain Current	195 A
Rds On – Drain-Source Resistance	2 mOhms
Vgs – Gate-Source Voltage	– 20 V, + 20 V
Vgs th – Gate-Source Threshold Voltage	3.7 V
Qg – Gate Charge	186 nC
Minimum Operating Temperature	– 55 C
Maximum Operating Temperature	+ 175 C
Pd – Power Dissipation	294 W
Channel Mode	Enhancement
Configuration	Single
Fall Time	93 ns
Height	15.65 mm
Length	10 mm
Rise Time	134 ns
Transistor Type	1 N-Channel
Typical Turn-Off Delay Time	118 ns
Typical Turn-On Delay Time	20 ns
Width	4.4 mm
Unit Weight	0.068784 oz