| Manufacturer | Infineon |
| Technology | Si |
| Mounting Style | Through Hole |
| Package / Case | TO-220-3 |
| Transistor Polarity | N-Channel |
| Number of Channels | 1 Channel |
| Vds – Drain-Source Breakdown Voltage | 200 V |
| Id – Continuous Drain Current | 65 A |
| Rds On – Drain-Source Resistance | 24 mOhms |
| Vgs – Gate-Source Voltage | – 30 V, + 30 V |
| Vgs th – Gate-Source Threshold Voltage | 1.8 V |
| Qg – Gate Charge | 70 nC |
| Minimum Operating Temperature | – 40 C |
| Maximum Operating Temperature | + 175 C |
| Pd – Power Dissipation | 330 W |
| Channel Mode | Enhancement |
| Packaging | Tube |
| Brand | Infineon Technologies |
| Configuration | Single |
| Fall Time | 31 ns |
| Forward Transconductance – Min | 49 S |
| Height | 15.65 mm |
| Length | 10 mm |
| Product Type | MOSFET |
| Rise Time | 20 ns |
| Factory Pack Quantity | 1000 |
| Subcategory | MOSFETs |
| Transistor Type | 1 N-Channel |
| Typical Turn-Off Delay Time | 21 ns |
| Typical Turn-On Delay Time | 33 ns |
| Width | 4.4 mm |
| Unit Weight | 0.068784 oz |
IRFB4227PBF is the part number for a power MOSFET (Metal Oxide Semiconductor Field Effect Transistor) developed by Infineon Technologies. It is a N-channel MOSFET designed for high power switching applications, such as motor control, power supplies, and inverters. The IRFB4227PBF power MOSFET is designed to handle high currents and voltages, providing efficient power switching with low on-resistance. It offers reliable performance in demanding applications where high power and fast switching are required.