IRFB4115PBF

Manufacturer	Infineon
Packaging	Tube
Product Type	MOSFET
Factory Pack Quantity	1000
Technology	Si
Mounting Style	Through Hole
Package / Case	TO-220-3
Transistor Polarity	N-Channel
Number of Channels	1 Channel
Vds – Drain-Source Breakdown Voltage	150 V
Id – Continuous Drain Current	104 A
Rds On – Drain-Source Resistance	9.3 mOhms
Vgs – Gate-Source Voltage	– 20 V, + 20 V
Vgs th – Gate-Source Threshold Voltage	5 V
Qg – Gate Charge	77 nC
Minimum Operating Temperature	– 55 C
Maximum Operating Temperature	+ 175 C
Pd – Power Dissipation	380 W
Channel Mode	Enhancement
Configuration	Single
Fall Time	39 ns
Height	15.65 mm
Length	10 mm
Rise Time	73 ns
Transistor Type	1 N-Channel
Typical Turn-Off Delay Time	41 ns
Typical Turn-On Delay Time	18 ns
Width	4.4 mm
Unit Weight	0.068784 oz