IRFB3207PBF Infineon Technologies Power MOSFET

Manufacturer	Infineon
Technology	Si
Mounting Style	Through Hole
Package / Case	TO-220-3
Transistor Polarity	N-Channel
Number of Channels	1 Channel
Vds – Drain-Source Breakdown Voltage	75 V
Id – Continuous Drain Current	180 A
Rds On – Drain-Source Resistance	3.6 mOhms
Vgs – Gate-Source Voltage	– 20 V, + 20 V
Vgs th – Gate-Source Threshold Voltage	4 V
Qg – Gate Charge	180 nC
Minimum Operating Temperature	– 55 C
Maximum Operating Temperature	+ 175 C
Pd – Power Dissipation	330 W
Channel Mode	Enhancement
Packaging	Tube
Brand	Infineon Technologies
Configuration	Single
Height	15.65 mm
Length	10 mm
Product Type	MOSFET
Factory Pack Quantity	1000
Subcategory	MOSFETs
Transistor Type	1 N-Channel
Width	4.4 mm
Unit Weight	0.068784 oz

IRFB3207PBF