Manufacturer | Infineon |
Brand | Infineon Technologies |
Product Type | MOSFET |
Factory Pack Quantity | 4000 |
Technology | Si |
Mounting Style | SMD/SMT |
Package / Case | SOIC-8 |
Transistor Polarity | N-Channel, P-Channel |
Number of Channels | 2 Channel |
Vds – Drain-Source Breakdown Voltage | 20 V |
Id – Continuous Drain Current | 6.6 A |
Rds On – Drain-Source Resistance | 29 mOhms |
Vgs – Gate-Source Voltage | – 12 V, + 12 V |
Vgs th – Gate-Source Threshold Voltage | 700 mV |
Qg – Gate Charge | 18 nC |
Minimum Operating Temperature | – 55 C |
Maximum Operating Temperature | + 150 C |
Pd – Power Dissipation | 2 W |
Channel Mode | Enhancement |
Configuration | Dual |
Height | 1.75 mm |
Length | 4.9 mm |
Transistor Type | 1 N-Channel, 1 P-Channel |
Width | 3.9 mm |
Unit Weight | 0.019048 oz |