| Manufacturer | INFINEON |
| Series | HEXFET® |
| D/C | 23+ |
| Package | Tube |
| Description | N-Channel 100 V 57A (Tc) 200W (Tc) Through Hole TO-220AB |
| Power Dissipation (Max) | 200W (Tc) |
| Product Status | Active |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Package / Case | TO-220-3 |
| Base Product Number | IRF3710 |
The IRF3710PBF is an N-channel power MOSFET from Infineon Technologies, capable of handling a drain-to-source voltage of 100V and a continuous drain current of 57A. It features a low on-resistance of 23 milliohms, ensuring efficient power switching. Packaged in a TO-220AB for through-hole mounting, it is ideal for power management, motor drives, inverters, and other high-efficiency switching applications. This MOSFET is known for its high efficiency, low conduction losses, and robust performance.