| Manufacturer | Infineon |
| Technology | Si |
| Mounting Style | Through Hole |
| Package / Case | TO-220-3 |
| Transistor Polarity | N-Channel |
| Number of Channels | 1 Channel |
| Vds – Drain-Source Breakdown Voltage | 75 V |
| Id – Continuous Drain Current | 82 A |
| Rds On – Drain-Source Resistance | 13 mOhms |
| Vgs – Gate-Source Voltage | – 20 V, + 20 V |
| Vgs th – Gate-Source Threshold Voltage | 2 V |
| Qg – Gate Charge | 106.7 nC |
| Minimum Operating Temperature | – 55 C |
| Maximum Operating Temperature | + 175 C |
| Pd – Power Dissipation | 200 W |
| Channel Mode | Enhancement |
| Packaging | Tube |
| Brand | Infineon Technologies |
| Configuration | Single |
| Height | 15.65 mm |
| Length | 10 mm |
| Product Type | MOSFET |
| Factory Pack Quantity | 1000 |
| Subcategory | MOSFETs |
| Transistor Type | 1 N-Channel |
| Width | 4.4 mm |
| Unit Weight | 0.068784 oz |
IRF2807PBF is a part number for a power MOSFET transistor manufactured by Infineon Technologies. This transistor is commonly used in a wide range of applications, including power supplies, motor controls, and automotive systems. Its high current handling capability and low on-resistance make it suitable for applications requiring efficient power switching and high reliability.