IPG20N10S4L-22

Manufacturer	Infineon
Technology	Si
Mounting Style	SMD/SMT
Package / Case	TDSON-8
Transistor Polarity	N-Channel
Number of Channels	2 Channel
Vds – Drain-Source Breakdown Voltage	100 V
Id – Continuous Drain Current	20 A
Rds On – Drain-Source Resistance	20 mOhms, 20 mOhms
Vgs – Gate-Source Voltage	– 16 V, + 16 V
Vgs th – Gate-Source Threshold Voltage	1.1 V
Qg – Gate Charge	27 nC
Minimum Operating Temperature	– 55 C
Maximum Operating Temperature	+ 175 C
Pd – Power Dissipation	60 W
Channel Mode	Enhancement
Qualification	AEC-Q101
Series	XPG20N10
Packaging	Reel
Configuration	Dual
Fall Time	18 ns, 18 ns
Height	1.27 mm
Length	5.9 mm
Product Type	MOSFET
Rise Time	3 ns, 3 ns
Factory Pack Quantity	5000
Subcategory	MOSFETs
Transistor Type	2 N-Channel
Typical Turn-Off Delay Time	30 ns, 30 ns
Typical Turn-On Delay Time	5 ns, 5ns
Width	5.15 mm
Part # Aliases	SP000866570 IPG2N1S4L22XT IPG20N10S4L22ATMA1
Unit Weight	0.003445 oz