IPG20N06S4L-26

Manufacturer	Infineon
Technology	Si
Mounting Style	SMD/SMT
Package / Case	TDSON-8
Transistor Polarity	N-Channel
Number of Channels	2 Channel
Vds – Drain-Source Breakdown Voltage	60 V
Id – Continuous Drain Current	20 A
Rds On – Drain-Source Resistance	21 mOhms, 21 mOhms
Vgs – Gate-Source Voltage	– 16 V, + 16 V
Vgs th – Gate-Source Threshold Voltage	1.2 V
Qg – Gate Charge	20 nC
Minimum Operating Temperature	– 55 C
Maximum Operating Temperature	+ 175 C
Pd – Power Dissipation	33 W
Channel Mode	Enhancement
Qualification	AEC-Q101
Tradename	OptiMOS
Series	OptiMOS-T2
Packaging	Reel
Configuration	Dual
Fall Time	10 ns, 10 ns
Height	1.27 mm
Length	5.9 mm
Product Type	MOSFET
Rise Time	1.5 ns, 1.5 ns
Factory Pack Quantity	5000
Subcategory	MOSFETs
Transistor Type	2 N-Channel
Typical Turn-Off Delay Time	18 ns, 18 ns
Typical Turn-On Delay Time	5 ns, 5 ns
Width	5.15 mm
Part # Aliases	IPG2N6S4L26XT SP000705588 IPG20N06S4L26ATMA1
Unit Weight	0.003402 oz