IPD90P04P4L-04 Infineon Technologies Power-Transistor

IPD90P04P4L-04

MOSFET P-Ch -40V -90A DPAK-2 OptiMOS-P2
sku:IPD90P04P4L-04
Manufacture:Infineon Technologies
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Description

Manufacturer Infineon
Technology Si
Mounting Style SMD/SMT
Package / Case TO-252-3
Transistor Polarity P-Channel
Number of Channels 1 Channel
Vds – Drain-Source Breakdown Voltage 40 V
Id – Continuous Drain Current 90 A
Rds On – Drain-Source Resistance 6.6 mOhms
Vgs – Gate-Source Voltage – 16 V, + 5 V
Vgs th – Gate-Source Threshold Voltage 1.2 V
Qg – Gate Charge 135 nC
Minimum Operating Temperature – 55 C
Maximum Operating Temperature + 175 C
Pd – Power Dissipation 125 W
Channel Mode Enhancement
Tradename OptiMOS
Series OptiMOS-P2
Packaging MouseReel
Brand Infineon Technologies
Configuration Single
Fall Time 60 ns
Height 2.3 mm
Length 6.5 mm
Product Type MOSFET
Rise Time 20 ns
Factory Pack Quantity 2500
Subcategory MOSFETs
Transistor Type 1 P-Channel
Typical Turn-Off Delay Time 140 ns
Typical Turn-On Delay Time 20 ns
Width 6.22 mm
Unit Weight 0.011640 oz