IPD75N04S4-06

Manufacturer	Infineon
Series	OptiMOS-T2
Qualification	AEC-Q101
Brand	Infineon Technologies
Product Type	MOSFET
Factory Pack Quantity	2500
Tradename	OptiMOS
Technology	Si
Mounting Style	SMD/SMT
Package / Case	TO-252-3
Transistor Polarity	N-Channel
Number of Channels	1 Channel
Vds – Drain-Source Breakdown Voltage	40 V
Id – Continuous Drain Current	75 A
Rds On – Drain-Source Resistance	5.9 mOhms
Vgs – Gate-Source Voltage	– 20 V, + 20 V
Vgs th – Gate-Source Threshold Voltage	3 V
Qg – Gate Charge	32 nC
Minimum Operating Temperature	– 55 C
Maximum Operating Temperature	+ 175 C
Pd – Power Dissipation	58 W
Channel Mode	Enhancement
Configuration	Single
Height	2.3 mm
Length	6.5 mm
Transistor Type	1 N-Channel
Width	6.22 mm
Part # Aliases	IPD75N4S46XT SP000711472 IPD75N04S406ATMA1
Unit Weight	0.011640 oz