IPD70P04P4-09

Manufacturer	Infineon
Technology	Si
Mounting Style	SMD/SMT
Package / Case	TO-252-3
Transistor Polarity	P-Channel
Number of Channels	1 Channel
Vds – Drain-Source Breakdown Voltage	40 V
Id – Continuous Drain Current	73 A
Rds On – Drain-Source Resistance	8.9 mOhms
Vgs – Gate-Source Voltage	– 20 V, + 20 V
Vgs th – Gate-Source Threshold Voltage	4 V
Qg – Gate Charge	54 nC
Minimum Operating Temperature	– 55 C
Maximum Operating Temperature	+ 175 C
Pd – Power Dissipation	75 W
Channel Mode	Enhancement
Qualification	AEC-Q101
Tradename	OptiMOS
Series	OptiMOS-P2
Brand	Infineon Technologies
Configuration	Single
Height	2.3 mm
Length	6.5 mm
Product Type	MOSFET
Factory Pack Quantity	2500
Subcategory	MOSFETs
Transistor Type	1 P-Channel
Width	6.22 mm
Part # Aliases	IPD7P4P49XT SP000709326 IPD70P04P409ATMA1
Unit Weight	0.011640 oz