IPD50P04P4-13

Manufacturer	Infineon
Technology	Si
Mounting Style	SMD/SMT
Package / Case	TO-252-3
Transistor Polarity	P-Channel
Number of Channels	1 Channel
Vds – Drain-Source Breakdown Voltage	40 V
Id – Continuous Drain Current	50 A
Rds On – Drain-Source Resistance	12.6 mOhms
Vgs – Gate-Source Voltage	– 20 V, + 20 V
Vgs th – Gate-Source Threshold Voltage	2 V
Qg – Gate Charge	39 nC
Minimum Operating Temperature	– 55 C
Maximum Operating Temperature	+ 175 C
Pd – Power Dissipation	58 W
Channel Mode	Enhancement
Qualification	AEC-Q101
Tradename	OptiMOS
Series	OptiMOS-P2
Brand	Infineon Technologies
Configuration	Single
Fall Time	28 ns
Height	2.3 mm
Length	6.5 mm
Product Type	MOSFET
Rise Time	10 ns
Factory Pack Quantity	2500
Subcategory	MOSFETs
Transistor Type	1 P-Channel
Typical Turn-Off Delay Time	22 ns
Typical Turn-On Delay Time	17 ns
Width	6.22 mm
Part # Aliases	IPD5P4P413XT SP000840204 IPD50P04P413ATMA1
Unit Weight	0.011640 oz