IPD50N10S3L-16

Manufacturer	Infineon
Series	OptiMOS-T
Qualification	AEC-Q101
Packaging	Reel
Brand	Infineon Technologies
Product Type	MOSFET
Factory Pack Quantity	2500
Tradename	OptiMOS
Technology	Si
Mounting Style	SMD/SMT
Package / Case	TO-252-3
Transistor Polarity	N-Channel
Number of Channels	1 Channel
Vds – Drain-Source Breakdown Voltage	100 V
Id – Continuous Drain Current	50 A
Rds On – Drain-Source Resistance	15 mOhms
Vgs – Gate-Source Voltage	– 20 V, + 20 V
Vgs th – Gate-Source Threshold Voltage	1.2 V
Qg – Gate Charge	49 nC
Minimum Operating Temperature	– 55 C
Maximum Operating Temperature	+ 175 C
Pd – Power Dissipation	100 W
Channel Mode	Enhancement
Configuration	Single
Fall Time	5 ns
Height	2.3 mm
Length	6.5 mm
Rise Time	5 ns
Transistor Type	1 N-Channel
Typical Turn-Off Delay Time	29 ns
Typical Turn-On Delay Time	10 ns
Width	6.22 mm
Part # Aliases	SP000386185 IPD5N1S3L16XT IPD50N10S3L16ATMA1
Unit Weight	0.011640 oz