IPD50N06S4-09 - G.A. Group: Electronic Components Distributor Since 2005

IPD50N06S4-09

MOSFET N-Ch 60V 50A DPAK-2 OptiMOS-T2
sku:IPD50N06S4-09
Manufacture:Infineon Technologies
sales@galaxyic.com inquiry

Description

Manufacturer Infineon
Series OptiMOS-T2
Packaging MouseReel
Brand Infineon Technologies
Product Type MOSFET
Factory Pack Quantity 2500
Tradename OptiMOS
Technology Si
Mounting Style SMD/SMT
Package / Case TO-252-3
Transistor Polarity N-Channel
Number of Channels 1 Channel
Vds – Drain-Source Breakdown Voltage 60 V
Id – Continuous Drain Current 50 A
Rds On – Drain-Source Resistance 7.1 mOhms
Vgs – Gate-Source Voltage – 20 V, + 20 V
Vgs th – Gate-Source Threshold Voltage 2 V
Qg – Gate Charge 47 nC
Minimum Operating Temperature – 55 C
Maximum Operating Temperature + 175 C
Pd – Power Dissipation 71 W
Channel Mode Enhancement
Configuration Single
Fall Time 5 ns
Height 2.3 mm
Length 6.5 mm
Rise Time 40 ns
Transistor Type 1 N-Channel
Typical Turn-Off Delay Time 20 ns
Typical Turn-On Delay Time 15 ns
Width 6.22 mm
Part # Aliases SP000374321 IPD5N6S49XT IPD50N06S409ATMA1
Unit Weight 0.011640 oz
Type OptiMOS T2 Power Transistor