IPD35N10S3L-26

Manufacturer	Infineon
Technology	Si
Mounting Style	SMD/SMT
Package / Case	TO-252-3
Transistor Polarity	N-Channel
Number of Channels	1 Channel
Vds – Drain-Source Breakdown Voltage	100 V
Id – Continuous Drain Current	35 A
Rds On – Drain-Source Resistance	24 mOhms
Vgs – Gate-Source Voltage	– 20 V, + 20 V
Vgs th – Gate-Source Threshold Voltage	1.2 V
Qg – Gate Charge	30 nC
Minimum Operating Temperature	– 55 C
Maximum Operating Temperature	+ 175 C
Pd – Power Dissipation	71 W
Channel Mode	Enhancement
Qualification	AEC-Q101
Tradename	OptiMOS
Series	OptiMOS-T
Configuration	Single
Fall Time	3 ns
Height	2.3 mm
Length	6.5 mm
Product Type	MOSFET
Rise Time	4 ns
Factory Pack Quantity	2500
Subcategory	MOSFETs
Transistor Type	1 N-Channel
Typical Turn-Off Delay Time	18 ns
Typical Turn-On Delay Time	6 ns
Width	6.22 mm
Part # Aliases	IPD35N1S3L26XT SP000386184 IPD35N10S3L26ATMA1
Unit Weight	0.139332 oz