IPD30N03S4L14ATMA1 & Datasheet Infineon Technologies

IPD30N03S4L14ATMA1

N-Channel 30 V 30A (Tc) 31W (Tc) Surface Mount PG-TO252-3-11
sku:IPD30N03S4L14ATMA1
Manufacture:Infineon Technologies
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Description

Manufacturer Infineon Technologies
Manufacturer Standard Lead Time 52 Weeks
Series OptiMOS™
Package Tape & Reel (TR), Cut Tape (CT)
Description MOSFET N-CH 30V 30A TO252-3
Product Status Active
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package PG-TO252-3-11
Base Product Number IPD30N03
Technology MOSFET (Metal Oxide)

Infineon Technologies IPD30N03S4L14ATMA1 is an N-Channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for various electronic applications. Operating with a voltage rating of 30 volts, a maximum continuous drain current (Tc) of 30 amperes, and a power dissipation of 31 watts (Tc), this MOSFET is suitable for surface-mount applications. It comes in the PG-TO252-3-11 package, providing a convenient and efficient form factor for electronic circuit integration.