IPB80N06S4-05

Manufacturer	Infineon
Series	OptiMOS-T2
Brand	Infineon Technologies
Product Type	MOSFET
Factory Pack Quantity	1000
Tradename	OptiMOS
Technology	Si
Mounting Style	SMD/SMT
Package / Case	TO-263-3
Transistor Polarity	N-Channel
Number of Channels	1 Channel
Vds – Drain-Source Breakdown Voltage	60 V
Id – Continuous Drain Current	80 A
Rds On – Drain-Source Resistance	5.4 mOhms
Vgs – Gate-Source Voltage	– 20 V, + 20 V
Vgs th – Gate-Source Threshold Voltage	4 V
Qg – Gate Charge	62 nC
Minimum Operating Temperature	– 55 C
Maximum Operating Temperature	+ 175 C
Pd – Power Dissipation	107 W
Channel Mode	Enhancement
Configuration	Single
Height	4.4 mm
Length	10 mm
Transistor Type	1 N-Channel
Width	9.25 mm
Part # Aliases	IPB80N06S405ATMA2 IPB8N6S45XT SP000415566 IPB80N06S405ATMA1
Unit Weight	0.139332 oz