IPB80N06S2L-07

Manufacturer	Infineon
Technology	Si
Mounting Style	SMD/SMT
Package / Case	TO-263-3
Transistor Polarity	N-Channel
Number of Channels	1 Channel
Vds – Drain-Source Breakdown Voltage	55 V
Id – Continuous Drain Current	80 A
Rds On – Drain-Source Resistance	6.7 mOhms
Vgs – Gate-Source Voltage	– 20 V, + 20 V
Minimum Operating Temperature	– 55 C
Maximum Operating Temperature	+ 175 C
Pd – Power Dissipation	210 W
Channel Mode	Enhancement
Tradename	OptiMOS
Series	OptiMOS
Packaging	Reel
Configuration	Single
Fall Time	31 ns
Height	4.4 mm
Length	10 mm
Product Type	MOSFET
Rise Time	35 ns
Factory Pack Quantity	1000
Subcategory	MOSFETs
Transistor Type	1 N-Channel
Typical Turn-Off Delay Time	28 ns
Typical Turn-On Delay Time	18 ns
Width	9.25 mm
Part # Aliases	SP000218867 IPB80N06S2L07ATMA1
Unit Weight	0.139332 oz