IPB80N04S4-03

Manufacturer	Infineon
Series	OptiMOS-T2
Qualification	AEC-Q101
Brand	Infineon Technologies
Product Type	MOSFET
Factory Pack Quantity	1000
Tradename	OptiMOS
Technology	Si
Mounting Style	SMD/SMT
Package / Case	TO-263-3
Transistor Polarity	N-Channel
Number of Channels	1 Channel
Vds – Drain-Source Breakdown Voltage	40 V
Id – Continuous Drain Current	80 A
Rds On – Drain-Source Resistance	3.3 mOhms
Vgs – Gate-Source Voltage	– 20 V, + 20 V
Vgs th – Gate-Source Threshold Voltage	3 V
Qg – Gate Charge	51 nC
Minimum Operating Temperature	– 55 C
Maximum Operating Temperature	+ 175 C
Pd – Power Dissipation	94 W
Channel Mode	Enhancement
Configuration	Single
Fall Time	16 ns
Height	4.4 mm
Length	10 mm
Rise Time	12 ns
Transistor Type	1 N-Channel
Typical Turn-Off Delay Time	14 ns
Typical Turn-On Delay Time	14 ns
Width	9.25 mm
Part # Aliases	SP000671628 IPB8N4S43XT IPB80N04S403ATMA1
Unit Weight	0.139332 oz