IPB80N04S2-H4

Manufacturer	Infineon
Technology	Si
Mounting Style	SMD/SMT
Package / Case	TO-263-3
Transistor Polarity	N-Channel
Number of Channels	1 Channel
Vds – Drain-Source Breakdown Voltage	40 V
Id – Continuous Drain Current	80 A
Rds On – Drain-Source Resistance	3.7 mOhms
Vgs – Gate-Source Voltage	– 20 V, + 20 V
Minimum Operating Temperature	– 55 C
Maximum Operating Temperature	+ 175 C
Pd – Power Dissipation	300 W
Channel Mode	Enhancement
Packaging	Reel
Configuration	Single
Fall Time	22 ns
Height	4.4 mm
Length	10 mm
Product Type	MOSFET
Rise Time	63 ns
Factory Pack Quantity	1000
Subcategory	MOSFETs
Transistor Type	1 N-Channel
Typical Turn-Off Delay Time	46 ns
Typical Turn-On Delay Time	23 ns
Width	9.25 mm
Part # Aliases	SP000218165 IPB80N04S2H4ATMA1
Unit Weight	0.139332 oz