IPB120P04P4L-03 Infineon Technologies MOSFET Transistors

Manufacturer	Infineon
Technology	Si
Mounting Style	SMD/SMT
Package / Case	TO-263-3
Transistor Polarity	P-Channel
Number of Channels	1 Channel
Vds – Drain-Source Breakdown Voltage	40 V
Id – Continuous Drain Current	120 A
Rds On – Drain-Source Resistance	4.9 mOhms
Vgs – Gate-Source Voltage	– 16 V, + 16 V
Vgs th – Gate-Source Threshold Voltage	1.2 V
Qg – Gate Charge	180 nC
Minimum Operating Temperature	– 55 C
Maximum Operating Temperature	+ 175 C
Pd – Power Dissipation	136 W
Channel Mode	Enhancement
Tradename	OptiMOS
Series	OptiMOS-P2
Brand	Infineon Technologies
Configuration	Single
Fall Time	57 ns
Height	4.4 mm
Length	10 mm
Product Type	MOSFET
Rise Time	16 ns
Factory Pack Quantity	1000
Subcategory	MOSFETs
Transistor Type	1 P-Channel
Typical Turn-Off Delay Time	85 ns
Typical Turn-On Delay Time	21 ns
Width	9.25 mm
Unit Weight	0.139332 oz

IPB120P04P4L-03